um2100 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 pa tm ? www. microsemi .com g e 1 copyright ? 2007 rev: 2009-01-19 attenuator and power pin diodes 2 ? 30 mhz rohs compliant versions available important: for the most current data, consult our website: www.microsemi.com key features ? hf band (2-30 mhz) pin ? long lifetime (25 s typical) ? high power ( 1kw, cw) ? high isolation (32db) ? low loss (0.25db) ? very low distortion (ip3=60dbm) ? voltage ratings to 1000 v ? rohs compliant packaging available 1 (use umx2101b, etc.) 1 the um2100 series of products can be supplied with a rohs compliant finish (umx2100) or with a 90/10 sn/pb finish. consult factory for details. description um2100 series pin diodes are designed for transmit/receive switch and attenuator applications in hf band (2-30mhz) and below. as series configured switches, these long lifetime (25 s typical) diodes can control up to 2.5 kw, cw in a 50 ohm system. in hf band, insertion loss is less than 0.25db and isolation is greater than 32db (off-state). the um2100 series offers the lowest distortion performance in both transmit and receive modes. less than 50 ma forward bias is requires to obtain an ip3 of 60 dbm at 300 khz with 1 watt per tone. the forward biased resistance/reactanc e vs. frequency characteristics are flat down to 10 khz. the capacit ance vs. reverse bias voltage characteristic is flat down to 2 mhz. in attenuator configuration, the um2100 produces extremely low distorti on at low values of attenuator control current, and very low insertion loss (0.2db) in the ?0db? attenuator state. absolute maximum ratings at 25o c (unless otherwise specified) package conditions (p d ) power dissapation (w) ( )thermal resistance ( o c/w) a 25 o c pin temperature 25 50v b 12 12.5 e ? in. total length to 25 o c contact free air 2.5 c 25 o c stud temperature 25 6 d 25 o c stud temperature 18.75 8 sm 25 o c end cap temperature 15 10 all 1 us pulse (single) 100kw all storage temperature (t op ) -65 o c to + 175 o c all operating temperature (t op ) -65 o c to + 175 o c applications/benefits ? isolated stud package available ? surface mount package available ? soldering temperature: 260 o c for 10 seconds maximum u u m m 2 2 1 1 0 0 0 0
um2100 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 pa tm ? microsemi .com g e 2 www. copyright ? 2007 rev: 2009-01-19 attenuator and power pin diodes 2 ? 30 mhz rohs compliant versions available voltage ratings . @ 25 ? c (unless otherwise specified) part number reverse voltage @ 10ua (v) um2101 100 um2102 200 um2104 400 UM2106 600 um2108 800 um2110 1000 electrical parameters @ 25 ? c (unless otherwise specified) parameter symbol conditions min. typical max. units total capacitance c t v r =100v, f= 1 mhz 1.9 2.5 pf series resistance r s if = 100 ma, f= 2 mhz 1.0 2.0 ohms carrier lifetime t l i f = 10 ma/100 v 20 25 s reverse current i r v r = voltage rating 10 a intermodulation distortion test circuit si gnal generato r spectr a nalyze r dc current supply r fc r fc f1 f2 * * generator si gnal * * power spli tte r intermodulation distortion ip3 p=2w total, i f =25ma f1 = 1.999 mhz f2 = 2.001 mhz 1.0 w/tone 50 60 dbm e e l l e e c c t t r r i i c c a a l l s s * may be controlled with the ieee-488 bus circuit.
um2100 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 pa tm ? www. microsemi .com g e 3 copyright ? 2007 rev: 2009-01-19 attenuator and power pin diodes 2 ? 30 mhz rohs compliant versions available typical rs vs if typical rs / reactance vs freq -1 10 0 10 1 10 2 10 if (ma) -1 10 0 10 1 10 2 10 rs (ohms) rs versus if typical f = 2 mhz 2 10 3 10 4 10 5 10 6 10 7 10 frequency (hz) -0.5 0.0 0.5 1.0 1.5 2.0 resistance / reactance (ohms) resistance / reactance versus frequency typical resistance reactance if = 100 ma power/tone vs if capacitance vs voltage 0 10 1 10 2 10 if needed to obtain an im3 of -60 dbc [ma] 15 20 25 30 35 40 power level/tone [dbm] 45 50 55 60 65 70 ip3 [dbm] power level/tone versus forward bias current typical 2 mhz 1 mhz 500 khz 250 khz 150 khz f1 = f - 1 khz f2 = f + 1 khz -1 10 0 10 1 10 2 10 vr (v) 0 2 4 6 8 10 12 14 16 18 20 capacitance (pf) capacitance versus voltage typical 10 khz 100 khz 200 khz 400 khz 1 mhz 2 mhz 4 mhz 10 mhz graphs
um2100 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 pa tm ? www. microsemi .com g e 4 copyright ? 2007 rev: 2009-01-19 attenuator and power pin diodes 2 ? 30 mhz rohs compliant versions available i/v vs temp 0.0 0.5 1.0 1.5 vf (v) -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 if (a) mean if versus vf curve versus temperature typical -----25c --------------75c ---------------100c ---------------125c 150c------------ g g r r a a p p h h s s
um2100 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 pa tm ? www. microsemi .com g e 5 copyright ? 2007 rev: 2009-01-19 attenuator and power pin diodes 2 ? 30 mhz rohs compliant versions available package style ?a? package style ?b? package style ?c? package style ?cr? package style ?d? package style ?dr? mechanical
um2100 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978-442-5600, fax: 978-937-3748 pa tm ? www. microsemi .com g e 6 copyright ? 2007 rev: 2009-01-19 attenuator and power pin diodes 2 ? 30 mhz rohs compliant versions available package style ?e? package style ?sm? style ?sm? footprint notes: 1 these dimensions will match the terminals a nd provide for additional solder fillets at the outboard ends at least as wide as the te rminals themselves, assuming accuracy of placement within 0.005? 2 if the mounting method chosen requires us e of an adhesive separat e from the solder compound, a round (or square) spot of cement as shown should be centrally located. m m e e c c h h a a n n i i c c a a l l
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